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Reliability of high k metal gate field effect transistors considering circuit operational constraints formatIsbn:Softcover 9783741208690 The target group is university 18 The target group is university students at graduate level The book provides an understanding of theory The reliability issues were caused by the electron trapping into already existing HfO2 oxygen vacancies The introduction of high k metal gate stacks guaranteed the trend towards smaller transistor dimensions
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Reliability of high-k / metal gate field-effect transistors considering circuit operational constraints formatIsbn:Softcover - 9783741208690 The target group is university 18

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